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HCTS365MS
September 1995
Radiation Hardened Hex Buffer/Line Driver Non-Inverting
Pinouts
16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW
OE1 1 A1 2 Y1 3 A2 4 Y2 5 16 VCC 15 OE2 14 A6 13 Y6 12 A5 11 Y5 10 A4 9 Y4
Features
* 3 Micron Radiation Hardened CMOS SOS * Total Dose 200K RAD (Si) * SEP Effective LET No Upsets: >100 MEV-cm2/mg * Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) * Dose Rate Survivability: >1 x 1012 RAD (Si)/s * Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse * Latch-Up Free Under Any Conditions * Fanout (Over Temperature Range) - Bus Driver Outputs: 15 LSTTL Loads * Military Temperature Range: -55oC to +125oC
A3 6 Y3 7 GND 8
* Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min * Input Current Levels Ii 5A @ VOL, VOH
16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C TOP VIEW
OE1 A1 Y1 A2 Y2 A3 Y3 GND 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VCC OE2 A6 Y6 A5 Y5 A4 Y4
Description
The Intersil HCTS365MS is a Radiation Hardened noninverting hex buffer and line driver with Tri-state outputs. The output enables (OE1 and OE2) control the three-state outputs. If either OE1 or OE2 is high the outputs will be in a High impedance state. For Data, OE1 and OE2 must be Low. The HCTS365MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family
Ordering Information
PART NUMBER HCTS365DMSR HCTS365KMSR HCTS365D/Sample HCTS365K/Sample HCTS365HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 16 Lead SBDIP 16 Lead Ceramic Flatpack 16 Lead SBDIP 16 Lead Ceramic Flatpack Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number File Number
1
518637 3070.1
HCTS365MS Functional Diagram
XX ONE OF THE IDENTICAL CIRCUITS 2 1A 3 1Y
GND 8 1 OE1 15 OE2 2A 6 2A 10 2A 12 2A 14 2A 9 27 11 27 13 27 7 27 4 3 27
TRUTH TABLE INPUTS OE1 L L X H OE2 L L H X A L H X X OUTPUTS Y L H Z Z
Spec Number 2
518637
Specifications HCTS365MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V (TR, TF) . . . . . . . . . . 500ns Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Sink) IOL VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V Output Voltage High VOH VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH =2.75V, IOH = -50A, VIL = 0.8V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN 7.2 6.0 -7.2 -6.0 MAX 40 750 0.1 UNITS A A mA mA mA mA V
PARAMETER Quiescent Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Voltage Low
VOL
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1 VCC -0.1 -
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
V
1 2, 3
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC
0.5 5.0 1 50 -
A A A A -
Three-State Output Leakage Current
IOZ
VCC = 5.5V, Applied Voltage = 0V or VCC
1 2, 3
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
7, 8A, 8B
1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 3
518637
Specifications HCTS365MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 TPHL VCC = 4.5V 9 10, 11 Enable to Output TPZL VCC = 4.5V 9 10, 11 TPZH VCC = 4.5V 9 10, 11 Disable to Output TPLZ VCC = 4.5V 9 10, 11 TPHZ VCC = 4.5V 9 10, 11 NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CONDITIONS VCC = 5.0V, f = 1MHz NOTES 1 1 CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K LIMITS RAD TEMPERATURE +25oC +25oC +25oC +25oC +25oC MIN 6.0 -6.0 VCC -0.1 MAX 0.75 0.1 UNITS mA mA mA V V TTHL TTLH VCC = 4.5V 1 1 TEMPERATURE +25oC +125oC, -55oC MIN 12 18 MAX 41 53 10 10 12 18 UNITS pF pF pF pF ns ns LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN 2 2 2 2 2 2 2 2 2 2 2 2 MAX 19 23 19 23 27 33 22 26 24 27 22 25 UNITS ns ns ns ns ns ns ns ns ns ns ns ns
PARAMETER Data to Output
SYMBOL TPLH
(NOTES 1, 2) CONDITIONS VCC = 4.5V
+25oC +125oC, -55oC
+25oC +125oC, -55oC
PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High
SYMBOL ICC IOL IOH VOL VOH
(NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50A
Spec Number 4
518637
Specifications HCTS365MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K LIMITS RAD TEMPERATURE +25oC +25oC +25oC +25oC +25 C +25oC +25oC +25 C +25oC
o o
PARAMETER Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test Data to Output
SYMBOL IIN IOZ FN TPLH TPHL
(NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 5.5V, Applied Voltage = 0V or VCC VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V VCC = 4.5V
MIN 2 2 2 2 2 2
MAX 5 50 23 23 33 26 27 25
UNITS A A ns ns ns ns ns ns
Enable to Output
TPZL TPZH
Disable to Output
TPLZ TPHZ
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP 5 5 5
PARAMETER ICC IOL/IOH IOZL/IOZH
DELTA LIMIT 12A -15% of 0 Hour 200nA
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test I (Postburn-In) Interim Test II (Postburn-In) PDA Interim Test III (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11, (Note 2) READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
Spec Number 5
518637
Specifications HCTS365MS
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 11, 13 1, 2, 4, 6, 8, 10, 12, 14, 15 16 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 11, 13 8 1, 2, 4, 6, 10, 12, 14, 15, 16 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 680 5% for dynamic burn-in. 1, 8, 15 3, 5, 7, 9, 11, 13 16 2, 4, 6, 10, 12, 14 -
TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3, 5, 7, 9, 11, 13 GROUND 8 VCC = 5V 0.5V 1, 2, 4, 6, 10, 12, 14 - 16
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures.
Spec Number 6
518637
HCTS365MS Intersil Space Level Product Flow - `MS'
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull, Method 2023 Sample - Wire Bond Pull Monitor, Method 2011 Sample - Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection, Method 2010, Condition A 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (Notes 1and 2) 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (Note 3) 100% External Visual, Method 2009 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5)
NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: * Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). * Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. * GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. * X-Ray report and film. Includes penetrometer measurements. * Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). * Lot Serial Number Sheet (Good units serial number and lot number). * Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. * The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative.
Spec Number 7
518637
HCTS365MS AC Timing Diagrams
VIH VS VIL CL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT CL = 50pF RL = 500 RL INPUT
AC Load Circuit
DUT TEST POINT
VOH
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.00 1.30 0 0 UNITS V V V V V
Three-State Low Timing Diagrams
VIH VS VIL TPZL TPLZ VOZ VT VOL OUTPUT VW INPUT
Three-State Low Load Circuit
VCC
RL
DUT
TEST POINT CL CL = 50pF RL = 500
THREE-STATE LOW VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCTS 4.50 3.00 1.30 1.30 0.90 0 UNITS V V V V V V
Spec Number 8
518637
HCTS365MS Three-State High Timing Diagrams
VIH VS VIL TPZH TPHZ VOH VT VOZ OUTPUT VW CL RL CL = 50pF RL = 500 INPUT
Three-State High Load Circuit
DUT TEST POINT
THREE-STATE HIGH VOLTAGE LEVELS PARAMETER VCC VIH VS VT VW GND HCTS 4.50 3.00 1.30 1.30 3.60 0 UNITS V V V V V V
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 9
518637
HCTS365MS Die Characteristics
DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCTS365MS
Y1 (3) A1 (2) OE1 (1) VCC (16) OE2 (15)
NC A2 (4)
(14) A6 Y2 (5)
(13) Y6
NC
(12) A5
A3 (6)
(11) Y5
NC
(7) Y3
(8) GND
NC
(9) Y4
(10) A4
NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS365 is TA14413A.
Spec Number 10
518637

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